LASER PRODUCED PLASMA

EUV source at 13.5nm products - TEUS Series with high brightness and low debris​

Isteq Group has been working on this technology since the industry chose to follow the EUV path. We have developed an EUV source based on laser-produced plasma (LPP). The source has extremely high brightness along with extremely high stability. It also has refreshable fuel with no interruption and no need to exchange fuel cartridges, hence giving the industry extremely high uptime.​ ​

The fuels we have developed for the LPP source are specific for the spectral range for a certain application. However, for mask inspection applications we have developed a high-frequency tin rotating target, which has been granted patents worldwide.​ ​

The technique that we are using to produce the EUV has many advantages over other competitors due to the experience and know-how that our team has gained in the field. ISTEQ’s XWS light source products have been specially developed to be used for a variety of applications, including spectroscopy, high resolution microscopy, thin - film measurement, surface metrology and others. These sources are based on cutting-edge technology, covered by world-wide patents. ​

TEUS S-100

Clean photon EUV source​




TEUS S-200

Clean photon EUV source​




TEUS S-400

Clean photon EUV source​




Main advantages
  • High brightness (means high throughput) along with excellent stability
  • Absolute minimum debris
  • Extremely high uptime
  • High duty cycle and turnkey operation (user-friendly along with automated protocol to ensure the system runs smoothly with no risk and interruption).



APPLICATIONS

  • Mask and surface inspections:​
  • Patterning Mask Inspection (PMI)
  • Areal Mask Inspection (AIMS)​
  • Mask Blank Inspection (MBI)​
  • EUV optics chain in the EUV scanner inspection
  • Material science​
  • Wafer inspection

TEUS EUV SPECIFICATIONS

MODEL TEUS S-100 TEUS S-200 TEUS S-400
MAIN SPECIFICATIONS
Laser average power 100W 200W​ 400W
Pulse repetition rate 25kHz or 70kHz (Maximum) 50kHz or 135kHz (Adjustable) 100kHz or 200kHz (Adjustable)
Solid angle of collectable EUV Power 0.05sr 0.05sr 0.05sr
Plasma size* µm ≤ 60 or ≤ 40 ≤ 60 or ≤ 40 ≤ 60 or ≤ 45
Conversion efficiency in-band (13,5 nm±1%) radiation 2 % @2π·sr​ or 1.6% @2π·sr​ 2 % @2π·sr​ or 1.6% @2π·sr​ 2 % @2π·sr​ or 1.8% @2π·sr​
EUV flux inside collection angle after debris mitigation system in-band (13.5nm±1%)​ 11 mW​ or 9 mW​ 22 mW​ or 18 mW​ 44 mW​ or 40 mW​
Spectral brightness after debris mitigation system in-band (13.5nm±1%), W/mm2·sr ≥ 80​W/mm2·sr​ or ≥ 140 W/mm2·sr​​ ≥ 160​W/mm2·sr​ or ≥ 280 W/mm2·sr​​ ≥ 310​W/mm2·sr​ or ≥ 500 W/mm2·sr​​
Plasma stability** 3% RMS 3% RMS 3% RMS
MODEL TEUS S-100 TEUS S-200 TEUS S-400
SYSTEM LIFETIME AND MAINTENANCE REQUIEMENTS
Collector lifetime with degradation of 10% without using a special membrane filter in 24/7 mode of operation not less than 8 months not less than 4 months not less than 2 months
Collector lifetime with degradation of 10% using a special membrane filter in 24/7 mode of operation not less than 18 months not less than 9 months not less than 4 months
Maintenance time every: 4 months - 1 day​ 3 months - 2 days​ 2 months - 1 day​
Uptime in 24/7 mode of operation*** 4 months​ 3 months​ 1 month​
MODEL TEUS S-100 TEUS S-200 TEUS S-400
ELECTRICAL POWER, SYSTEM DIMENSIONS AND WEIGHT
Electrical power ​ 6.5 kW 8.5 kW 10.5 kW
Dimensions (L×W×H) 1500×1000×1200 mm 1500×1000×1200 mm 1500×1000×1200 mm
Weight, including laser components 770 Kg 770 Kg 770 Kg
MODEL TEUS S-100 TEUS S-200 TEUS S-400
FACILITY REQUIREMENTS
Room cleanliness class ISO7​ ISO7​ ISO7​
Water flow rate 10 L/min 15 L/min 25 L/min

TECHNOLOGY

Find out more information about the technology of the EUV light sources




Custom design

Upon a request it is possible to modify ISTEQ serial products to meet customer requirements